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Amorphous Hydrogenated Silicon Film Deposited by Reactive Electron Cyclotron Resonance Plasma(Physics, Process, Instruments Measurements)

机译：反应电子回旋共振等离子体沉积的非晶氢化硅膜（物理，过程，仪器与测量）

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CHEN Wei; MIYAKE Shoji; ARIYASU Tomio;
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年度 2013
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1. Comparative and integrative study of Langmuir probe and optical emission spectroscopy in a variable magnetic field electron cyclotron resonance chemical vapor deposition process used for depositing hydrogenated amorphous silicon thin films [J] . L.C. Hu, G.M. Ruan, T.C. Wei, Thin Solid Films . 2014,第ptab期

机译：Langmuir探针与光发射光谱在可变磁场电子回旋共振化学气相沉积过程中的比较和综合研究，该过程用于沉积氢化非晶硅薄膜
2. Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by electron cyclotron resonance [J] . T.H. Dao, M.E. Gueunier-Farret, D. Daineka, Thin Solid Films . 2007,第19期

机译：热耦合对电子回旋共振沉积氢化非晶硅薄膜电子性能的影响
3. Hydrogenated amorphous silicon films deposited by electron cyclotron resonance chemical vapor deposition at room temperature with different radio frequency chuck powers [J] . Alvarez Hugo da S., Silva Audrey R., Cioldin Frederico H., Thin Solid Films . 2019,第Nova30期

机译：在室温下以不同的射频卡盘功率通过电子回旋共振化学气相沉积法沉积的氢化非晶硅膜
4. RF bias effects on properties of hydrogenated amorphous silicon deposited by electron cyclotron resonance plasma-enchanced chemical vapor deposition [C] . Yoshiyuki Hirano, NHK Science, Technical Research Labs., Conference on photodetectors: materials and devices . 1998

机译：射频偏压对电子回旋共振等离子体增强化学气相沉积法沉积氢化非晶硅性能的影响
5. Nanocrystalline and amorphous silicon thin film transistors deposited by microwave plasma electron cyclotron resonance chemical vapor deposition: Material analysis, device fabrication and characterization. [D] . Teng, Lihong. 2003

机译：微波等离子体电子回旋共振化学气相沉积法沉积的纳米晶和非晶硅薄膜晶体管：材料分析，器件制造和表征。
6. Enhanced Photoluminescence of Hydrogenated Amorphous Silicon Carbide Thin Films by Means of a Fast Thermal Annealing Process [O] . Israel Vivaldo, Roberto C. Ambrosio, Roberto López, 2020

机译：通过快速热退火工艺增强氢化非晶碳化硅薄膜的光致发光
7. Effect of bias voltage on the properties of hydrogenated amorphous carbon films fabricated on CoCrMo alloy by electron cyclotron resonance plasma enhance chemical vapor deposition (ECR-PECVD) [O] . Deng Xingrui, Leng Y.X., H.Sun, 2011

机译：偏压对电子回旋共振等离子体在CoCrMo合金上制备的氢化非晶碳膜性能的影响增强了化学气相沉积（ECR-PECVD）
8. Ellipsometry Investigation of Nucleation and Growth of Electron Cyclotron Resonance Plasma Deposited Silicon Films. [R] . Li, M., Hu, Y. Z., Wall, J., 1993

机译：椭圆偏振研究电子回旋共振等离子体沉积硅薄膜的成核和生长。

Amorphous Hydrogenated Silicon Film Deposited by Reactive Electron Cyclotron Resonance Plasma(Physics, Process, Instruments Measurements)

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