The Influence of Phosphorus Concentration of Electroless Plated Ni-P Film on Interfacial Structures in the Joints between Sn-Ag Solder and Ni-P Alloy Film

摘要

The interface structure between Sn-3Ag solder and electroless plated Ni film and the structure and near tat interface were examined. Plated electroless Ni films contained 3.7 mass percent phosphorus or 8.5 mass percent phosphorus. A P-enriched layer is formed at the joining interface between plated electroless Ni film and Sn-3Ag solder, in each sample with 3.7 mass percent P and 8.5 mass percent P. P-enriched layers of both P concentration samples contained double the P concentration than the original plated Ni films. Also, the P-enriched layer of the Ni-8.5 mass percent P sample was much thicker than that of the Ni-3.7 mass percent P sample. Both P-enriched layers have been composed of Ni-Sn-P layer and P enriched Ni-P layer. Kirkendall voids were formed between the 1st Ni-Sn-P layer and 2nd Ni-P layer. The number of voids observed in Ni-8.5 mass percent P sample was much greater than those in the Ni-3.7 mass percent P sample. Intermetallic compounds, mixtures of Ni_3Sn_2 and Ni_3Sn_4, were formed by the interfacial reaction. In the case of the Ni-3.7 mass percent P sample, Ni-Sn intermetallic compounds continuously crystallized on the P-enriched layer, while in the case of the Ni-8.5 mass percent P sample, Ni-Sn intermetallic compound crystallized dispersively in the solder.