PROGRESS IN DEVELOPMENT OF HIGH-POWER DISCHARGE SOURCES OF EXTREME UV RADIATION (A = 13.5 nm)

摘要

Extreme ultraviolet (EUV) radiation sources based on the pinch effect were investigated at the State Research Center of the Russian Federation, Troitsk Institute for Innovation and Fusion Research as potential sources for the next-generation lithography. Xenon-based sources provided EUV radiation with a power of ~ 250 W near the pinch, recalculated for a solid angle of 27r sr, in the range 13.5 ± 0.135 nm; i.e., in the band AX/X = 2 % at a pulse repetition frequency of 1700 Hz. In tin-based EUV sources, the conversion efficiency was as high as 1.4 to 2% for a plasma region 0.29x0.54mm in size emitting at A = 13.5 ± 0.135 nm. An EUV source with a tin-vapor discharge between rotating disk electrodes is also considered. This design made it possible to significantly decrease the thermal load on the surface of the electrodes.