Characteristics of HgCdTe epilayer grown by LPE using horizontal slider

J K RADHAKRISHNAN; S SITHARAMAN; S C GUPTA

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Characteristics of HgCdTe epilayer grown by LPE using horizontal slider

机译：LPE使用水平滑块生长HgCdTe外延层的特性

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摘要

The characteristics of HgCdTe epilayers grown in a modified horizontal slider system, are reported here. The surface morphology of the grown layers, their IR transmission characteristics, depth and lateral compositional uniformity, structural and electrical characteristics are discussed.

机译：本文报道了在改良的水平滑块系统中生长的HgCdTe外延层的特性。讨论了生长层的表面形态，其红外透射特性，深度和横向组成均匀性，结构和电学特性。

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《Bulletin of Materials Science》 |2002年第6期|共4页
作者
J K RADHAKRISHNAN; S SITHARAMAN; S C GUPTA;
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原文格式 PDF
正文语种 eng
中图分类工程材料学;
关键词
HgCdTe; LPE; characterization;

机译：HgCdTe;LPE;表征;

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专利

1. Characteristics of HgCdTe epilayer grown by LPE using horizontal slider [J] . J K RADHAKRISHNAN, S SITHARAMAN, S C GUPTA Bulletin of Materials Science . 2002,第6期

机译：LPE使用水平滑块生长HgCdTe外延层的特性
2. Characteristics of HgCdTe epilayer grown by LPE using horizontal slider [J] . J K Radhakrishnan, S C Gupta, S Sitharaman Bulletin of materials science . 2002,第6期

机译：LPE使用水平滑块生长的HgCdTe外延层的特性
3. Surface morphology of Hg0.8U0.2Te epilayers grown by LPE using horizontal slider [J] . Radhakrishnan JK., Sitharaman S., Gupta SC. Applied Surface Science . 2003,第1a4期

机译：LPE使用水平滑块生长的Hg0.8U0.2Te外延层的表面形态
4. Chemo-mechanical Polishing of HgCdTe Epilayers Grown Using LPE Technique [C] . Radheshyam Nokhwal, Akhilesh Pandey, B. L. Sharma, International Workshop on the Physics of Semiconductor Devices . 2019

机译：使用LPE技术生长HGCDTE癫痫的化学机械抛光
5. Defect studies in 4H- Silicon Carbide PVT grown bulk crystals, CVD grown epilayers and devices. [D] . Byrappa, Shayan M. 2013

机译：在4H-碳化硅PVT生长的块状晶体，CVD生长的外延层和器件中的缺陷研究。
6. Reduction of dislocations in α-Ga2O3 epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate [O] . Hoki Son, Ye-ji Choi, Soon-Ku Hong, 2021

机译：卤化物气相外延在锥形截肢型蓝宝石衬底上生长的α-GA2O3癫痫脱位的减少
7. Characteristics of HgCdTe epilayer grown by LPE using horizontal slider [O] . J K Radhakrishnan, S Sitharaman, S C Gupta 2014

机译：利用水平滑块生长LpE的HgCdTe外延层的特性
8. Characterization of LPE Grown HgCdTe by Ion Scattering Spectrometry [R] . Baun, W. L. 1979

机译：离子散射光谱法表征LpE生长的HgCdTe

Characteristics of HgCdTe epilayer grown by LPE using horizontal slider

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