NONDESTRUCTIVE BAND-GAP PROFILE DETERMINATION OF HgCdTe LPE GROWN LAYERS

摘要

Infrared transmission and photoconductivity spectra of mercury-cadmium telluride (MCT) epitaxial layers,grown by liquid phase epitaxy (LPE) on CdTe and CdZnTe wide band-gap substrates,were investigated both theoretically and experimentally at temperatures T=82 K and T=300 K in the infrared (IR) wavelength region 3-15 μm.The photoresponse position of the diodes was determined at cryogenic temperatures from the transmission spectra of room temperature.Theoretical calculations of optical density D(h-ω),needed for analysis of experimental optical transmission data,were performed in the framework of WKB approximation.