High speed copper electrodeposition is needed to achieve the through silicon via (TSV) process with a high throughput. To inhibit electrodeposition on the top surface of the TSV, octadecanthiol (ODT) was microcontact-printed on the top surface. The ODT microcontact-printing effectively inhibits copper electrodeposition on the top surface. With sulfonated diallyl dimethyl ammonium chloride copolymer (SDDACC), V shapes were formed in the via cross section, and these shapes led to bottom-up via filling. We succeeded in filling 10 mu m diameter and 70 mu m deep vias within 37 min. This was achieved by shortening the off time to 100 ms, ODT microcontact-printing, and adding 1 mg/L SDDACC additive.
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机译：需要高速的铜电沉积以实现高通量的穿硅通孔（TSV）工艺。为了抑制在TSV顶表面上的电沉积，将十八硫醇（ODT）微接触印刷在顶表面上。 ODT微接触印刷可有效抑制铜在顶部表面上的电沉积。使用磺化二烯丙基二甲基氯化铵共聚物（SDDACC），在通孔横截面中形成V形，这些形状导致自下而上的通孔填充。我们在37分钟内成功填充了10微米直径和70微米深的通孔。这是通过将关闭时间缩短至100 ms，ODT微接触印刷并添加1 mg / L SDDACC添加剂来实现的。
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