为了研究TSV-Cu的蠕变性能，首先利用典型的TSV工艺制作了电镀Cu的TSV试样，然后利用纳米压痕法对TSV-Cu进行了压痕蠕变测试.采用恒加载速率/载荷与恒载荷法相结合的方式，对TSV-Cu的蠕变行为进行了研究，测量了TSV-Cu在不同压入应变速率和最大压入深度条件下的蠕变行为.通过对保载阶段的数据进行处理，得到了不同加载条件下的蠕变速率敏感指数m.结果表明：压入应变速率和最大压入深度等加载条件对m的影响不很明显.%As through-silicon via ( TSV) is the core structural element of 3D integration or packaging, and the performance of TSV-Cu is critical for TSV reliability. This paper studied the creep behavior of TSV-Cu comprehensively. TSV-Cu sample was prepared by regular TSV process, and then nanoindention was used to determine the creep behavior of TSV-Cu at room temperature. A method of combining the constant loading rate/load test and the constant load test was introduced for the creep behavior testing. Therefore, the creep behaviors of TSV-Cu under various loading conditions were analyzed. The creep strain rate sensitivity m can also be obtained by processing the data from constant loading stage. Results show that m is independent with indentation strain rates and maximum indentation depths.
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