首页> 外国专利> COPPER ELECTRODEPOSITION SEQUENCE FOR THE FILLING OF COBALT LINED FEATURES

COPPER ELECTRODEPOSITION SEQUENCE FOR THE FILLING OF COBALT LINED FEATURES

机译:铜电沉积序列用于填充钴衬里特征

摘要

In one example, an electroplating system comprises a first bath reservoir, a second bath reservoir, a clamp, a first anode in the first bath reservoir, a second anode in the second bath reservoir, and a direct current power supply. The first bath reservoir contains a first electrolyte solution that includes an alkaline copper-complexed solution. The second bath reservoir contains a second electrolyte solution that includes an acidic copper plating solution. The direct current power supply generates a first direct current between the clamp and the first anode to electroplate a first copper layer on the cobalt layer of the wafer submerged in the first electrolyte solution. The direct current power supply then generates a second direct current between the clamp and the second anode to electroplate a second copper layer on the first copper layer of the wafer submerged in the second electrolyte solution.
机译:在一个示例中,电镀系统包括第一浴室储存器,第二槽储存器,第二浴室储存器,第一槽储存器中的第一阳极,第二槽储存器中的第二阳极,以及直流电源。第一浴室储存器包含第一电解质溶液,其包括碱性铜络合物溶液。第二浴室储存器含有第二电解质溶液,其包括酸性镀铜溶液。直流电源在夹具和第一阳极之间产生第一直流电流,以将第一铜层电镀在晶片的晶片的钴层上的第一铜层浸没在第一电解质溶液中。直流电源然后在夹具和第二阳极之间产生第二直流电流,以在第二电解质溶液中浸没在晶片的第一铜层上电镀第二铜层。

著录项

  • 公开/公告号US2021151322A1

    专利类型

  • 公开/公告日2021-05-20

    原文格式PDF

  • 申请/专利权人 LAM RESEARCH CORPORATION;

    申请/专利号US202117158963

  • 申请日2021-01-26

  • 分类号H01L21/288;C25D3/38;C25D17;C25D17/06;C25D5/10;C25D5/34;H01L21/321;H01L23/532;H01L21/285;H01L21/768;

  • 国家 US

  • 入库时间 2024-06-14 21:33:39

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