首页> 外国专利> COPPER ELECTRODEPOSITION SEQUENCE FOR THE FILLING OF COBALT LINED FEATURES

COPPER ELECTRODEPOSITION SEQUENCE FOR THE FILLING OF COBALT LINED FEATURES

机译:填充钴衬里特征的铜电沉积序列

摘要

In one example, an electroplating system comprises a first bath reservoir, a second bath reservoir, a clamp, a first anode in the first bath reservoir, a second anode in the second bath reservoir, and a direct current power supply. The first bath reservoir contains a first electrolyte solution that includes an alkaline copper-complexed solution. The second bath reservoir contains a second electrolyte solution that includes an acidic copper plating solution. The direct current power supply generates a first direct current between the clamp and the first anode to electroplate a first copper layer on the cobalt layer of the wafer submerged in the first electrolyte solution. The direct current power supply then generates a second direct current between the clamp and the second anode to electroplate a second copper layer on the first copper layer of the wafer submerged in the second electrolyte solution.
机译:在一个示例中,电镀系统包括第一浴槽,第二浴槽,夹具,第一浴槽中的第一阳极,第二浴槽中的第二阳极以及直流电源。第一浴槽容纳第一电解质溶液,该第一电解质溶液包括碱性铜络合物溶液。第二浴槽容纳第二电解质溶液,该第二电解质溶液包括酸性镀铜溶液。直流电源在夹具和第一阳极之间产生第一直流电流,以在浸没在第一电解质溶液中的晶片的钴层上电镀第一铜层。然后,直流电源在夹具和第二阳极之间产生第二直流电,以在浸没在第二电解质溶液中的晶片的第一铜层上电镀第二铜层。

著录项

  • 公开/公告号US2019304789A1

    专利类型

  • 公开/公告日2019-10-03

    原文格式PDF

  • 申请/专利权人 LAM RESEARCH CORPORATION;

    申请/专利号US201815941267

  • 申请日2018-03-30

  • 分类号H01L21/288;C25D3/38;C25D17;C25D17/06;C25D5/10;C25D5/34;H01L23/532;H01L21/285;H01L21/768;H01L21/321;

  • 国家 US

  • 入库时间 2022-08-21 12:08:16

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