Numerical simulation of copper filling within mesoporous silicon by electrodeposition

摘要

A model of metal electrodeposition within mesoporous silicon is proposed. The model is based on the coupled map lattice model, which includes diffusion of metal ions, electrode shape, equivalent circuit of electrochemical cell, and potential drop in porous silicon wall. Continuous tilling from the pore bottom to the opening and plugging at the pore opening were successfully reproduced using the present model. By analyzing the concentration profile of cuprie ions in solution, the mechanism of plugging at the pore opening and discontinuous filling by electrodeposition is discussed.