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Pt filling within mesoporous silicon by electrodeposition

机译:通过电沉积填充介孔硅内

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The filling of platinum within mesoporous silicon prepared in highly doped p-type silicon was investigated. The deposition of platinum within the mesopores was achieved when using a solution with Pt (II), while the pores were kept empty in a solution with Pt (IV). The particles of platinum were obtained by displacement deposition. The particles were distributed uniformly within the mesopores. The electrodeposition under a weak cathodic polarization resulted in the formation of platinum rods due to the continuous filling from the bottom. The displacement deposition was successfully suppressed by modifying the pore wall by an organic group. The amount of platinum deposition obtained under the cathodic polarization was significantly decreased when using the wall-modified mesoporous silicon. These results suggest that the electrodeposition and displacement deposition occur simultaneously within as-prepared mesoporous silicon.
机译:研究了在高掺杂的p型硅中制备的介孔硅内填充铂。当使用具有Pt(II)的溶液时,实现了在中孔内的铂沉积,而孔在具有Pt(IV)的溶液中保持空。通过位移沉积获得铂的颗粒。颗粒均匀地分布在中孔内。由于从底部连续填充,电沉积在弱阴极偏振下导致铂棒的形成。通过通过有机基团改变孔壁成功抑制了位移沉积。当使用壁改性的介孔硅时,在阴极偏振下获得的铂沉积量显着降低。这些结果表明电沉积和位移沉积同时发生在制备的中孔硅内。

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