Thermally stable TiVCrZrHf nitride films as diffusion barriers in copper metallization

摘要

In the present study, 10 nm-thick TiVCrZrHf nitride films were developed as diffusion barrier materials for Cu interconnects. The TiVCrZrHf nitride films were prepared at room temperature via reactive magnetron sputtering using a TiVCrZrHf target. Barrier properties were examined by annealing in vacuum at elevated temperatures for 60 min. The results show that the (TiVCrZrHf)N _(0.4) and (TiVCrZrHf)N films prevent the reaction between Cu and Si before failure at 600 and 800°C, respectively. The excellent thermal and structural stabilities of nitride for preventing silicide formation are assumed to originate from the incorporation of different-sized elements.