In formation manner of the metal diffusion barrier film and the metal diffusion barrier film and

摘要

PROBLEM TO BE SOLVED: To provide a metal diffusion barrier film which has both a low dielectric constant and a metal diffusion barrier property, can reduce wiring resistance, and has a superior filming property and a method for forming the film. ;SOLUTION: Disclosed in the metal diffusion barrier film containing a silicon- containing resin containing a repetitive unit represented by a formula (1): -Si(R₁ R₂)-R₃- among repetitive units. In the formula (1), R₁, R₂ are alkyl groups which may independently have hydrogen atoms and substituents whose carbon numbers are 1 to 30, alkenyl groups which may have substituents whose carbon numbers are 1 to 30, alkynyl groups which may have substituents whose carbon numbers are 1 to 30, or aromatic groups which may have substituents, and R₃ is -C≡C-, -CH₂- which may have a substituent bonded to at least one -C≡C-, an alkylene group which may have a substituent which is bonded to at least one -C≡C- and whose carbon number is 2 to 30, an alkenylen group which may have a substituent which is bonded to at least one -C≡C- and whose carbon number is 2 to 30, an alkynylen group which may have a substituent which is bonded to at least one -C≡C- and whose carbon number is 2 to 30, or a bivalent aromatic group which may have a substituent which is bonded to at least -C≡C-.;COPYRIGHT: (C)2004,JPO