Co-sputtered AlxNiy thin films were used as diffusion barriers between aluminumand hydrogenated microcrystalline silicon （μc-Si:H） for flexible thin film solar cells.The stoichiometricratio of AlxNiy showed a significant effect on the structures of the films.The obtainedAl3Ni2 film was amorphous,while polycrystalline films were obtained when the ratio of aluminumto nickel was 1:1 and 2:3.An auger electron spectroscope and four-point probe system wereapplied to test the resistance to the interdiffusion between aluminum and silicon,as well as theconductivities of the AlxNiy barriers.The data of auger depth profile showed that the content ofsilicon was the minimum in the aluminum layer after sputtering for 4 min using AINi thin film asthe barrier layer.Compared to other AlxNiy alloys,the AINi thin film possessed the lowest sheetresistance.
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