Enhanced Light Output Power of InGaN/GaN Light Emitting Diodes with Embedded Air Prisms

摘要

We report characteristics of the InGaN/GaN light emitting diodes LEDs-grown by selective metallorganic chemical vapor deposition with embedded air prisms EAPs via a wet etching process. At first, aqueous KOH solution, an etchant, removed the SiO2 mask pattern to facilitate a subsequent etching through N-face GaN to achieve crystallographically defined prism shapes. Well-aligned arrays of air prisms are formed and distributed throughout the entire device. The EAP–LED output power was increased 2.1 times compared with the conventional LED. The higher light extraction is attributed to the improvement in the scattering of photons at the EAP interface due to the large index difference between GaN and air prisms.