Surface Cleanness Dependence of the Interfacial Orientation of Endotaxial NiSi2 on Si(001)

摘要

In the growth of endotaxial nickel disilicide on Si(001) using reactive deposition epitaxy, three types of structures, which include the inverted-hut structure containing only the A-type NiSi2/Si interfaces, the parallel-epipedal structure, and the nanowire structure containing the B-type NiSi2/Si interfaces, can be observed. In this paper, we show that the formation of both the nanowires and the parallel-epipedal structures is related to the substrate surface-cleaning process and deposition temperatures. The formation of both the nanowires and the parallel-epipedal structures can be suppressed either with the high surface-cleaning temperature or at the low Ni deposition temperature.