Nanoprobe Failure Analysis of Sub-100 nm CMOS Transistor Technologies

摘要

As the minimum feature lengths for CMOS technology devices continue to shrink well below the sub-100 nm threshold, the physical defects that cause device failures are also decreasing in size. The number of smaller and more subtle defects that were not previously able to cause device failure in older technologies are becoming more prominent as device size and operating margins decrease. To successfully identify device failure mechanisms, it is frequently necessary to isolate these defects to a specific location of the failing transistor through electrical characterization.