Effects of Rapid Thermal Process Temperatures on Strain and Si Concentration Distributions in Ge-on-lnsulator Structures Formed by Rapid Melt Growth

摘要

Ge-on-insulator structures were fabricated using rapid melt growth with rapid thermal process temperatures ranging from 920 to 960℃. Residual tensile strain was observed in the strips annealed at 920℃/6 s, and almost no strain was found in samples annealed at 940 and 960cC/3 s. Furthermore, the reduction of Si-Ge interdiffusion was found in samples annealed at 920℃/6 s compared to that annealed at 940 and 960℃/3 s. These phenomena indicated single crystalline Ge grown below the melting point from the semisolid was preferred to the crystal grown above the melting point from the pure melt.