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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Pad Wear Analysis during Interlayer Dielectric Chemical Mechanical Planarization
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Pad Wear Analysis during Interlayer Dielectric Chemical Mechanical Planarization

机译:层间介电化学机械平面化过程中的垫磨损分析

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摘要

In this study, pad wear during interlayer dielectric (ILD) chemical mechanical planarization (CMP) was investigated using retaining rings with different materials and slot designs as well as pads with different materials at different platen temperatures. Results showed that the retaining ring slot design did not significantly affect the pad wear rate. On the other hand, the polyether ether ketone (PEEK) retaining ring exhibited a significantly lower pad wear rate (by 31%) than the polyphenylene sulfide (PPS) retaining ring. At both platen temperatures (25 and 50°C), the thermoplastic D100 pad exhibited lower pad wear rates than the thermoset IC1000 pad.
机译:在这项研究中,研究了层间介电层(ILD)化学机械平面化(CMP)期间的垫层磨损,使用了具有不同材料和槽口设计的固定环以及在不同压板温度下具有不同材料的垫层。结果表明,挡圈槽的设计没有显着影响垫的磨损率。另一方面,与聚苯硫醚(PPS)固定环相比,聚醚醚酮(PEEK)固定环表现出明显更低的摩擦片磨损率(降低了31%)。在两个压板温度(25和50°C)下,热塑性D100垫片的磨损率均低于热固性IC1000垫片。

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