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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes >Development and Analysis of a High-Pressure Micro Jet Pad Conditioning System for Interlayer Dielectric Chemical Mechanical Planarization
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Development and Analysis of a High-Pressure Micro Jet Pad Conditioning System for Interlayer Dielectric Chemical Mechanical Planarization

机译:层间介电化学机械平面化高压微喷垫调理系统的开发与分析

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摘要

Conventional diamond disc pad conditioning methods employed in chemical mechanical planarization (CMP) have presented several problems for integrated circuit (IC) manufacturers. These include diamond wear, which reduces pad life, and diamond fracture, which causes the semiconductor devices to be scratched by loose diamond fragments. In order to attempt to overcome these problems, a high-pressure micro jet (HPMJ) conditioning system, in which pressurized ultra pure water (UPW) ranging from 3-30 MPa is sprayed on the pad surface, is proposed and developed. This study first analyzes the extent of the kinetic energy of water droplets ejecting from the HPMJ system and its utility in conditioning the pad surface. Subsequently, CMP is used to polish interlayer dielectric (ILD) films using both conventional diamond discs as well as HPMJ conditioning methods. Results, reported in the form of coefficient of friction (COF), removal rate, pad surface roughness and pad surface quality, highlight both the advantages as well as disadvantages of the HPMJ method compared to conventional conditioning schemes.
机译:化学机械平面化(CMP)中采用的常规金刚石圆盘垫修整方法给集成电路(IC)制造商带来了几个问题。其中包括钻石磨损(这会减少垫片寿命)和钻石断裂(这会导致半导体器件被散落的钻石碎片划伤)。为了尝试克服这些问题,提出并开发了一种高压微喷射(HPMJ)调节系统,在该系统中,将3至30 MPa的加压超纯水(UPW)喷射到了垫表面上。这项研究首先分析了从HPMJ系统喷射的水滴动能的程度及其在调节垫表面中的效用。随后,使用CMP既使用常规的金刚石盘又使用HPMJ修整方法抛光层间电介质(ILD)膜。结果以摩擦系数(COF),去除率,垫表面粗糙度和垫表面质量的形式报告,突出了HPMJ方法与常规修整方案相比的优点和缺点。

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