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Effect of Conditioner Type and Downforce and Pad Surface Micro-Texture on SiO2 Chemical Mechanical Planarization Performance

机译:调节剂类型和下压力以及垫表面的微观结构对SiO2化学机械平面化性能的影响

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摘要

Based on a previous work where we investigated the effect of conditioner type and downforce on the evolution of pad surface micro-texture during break-in, we have chosen certain break-in conditions to carry out subsequent blanket SiO2 wafer polishing studies. Two different conditioner discs were used in conjunction with up to two different conditioning downforces. For each disc-downforce combination, mini-marathons were run using SiO2 wafers. Prior to polishing, each pad was broken-in for 30 min with one of the conditioner-downforce combinations. The goal of this study was to polish wafers after this break-in to see how the polishing process behaved immediately after break-in. One of the discs used in this study produced similar micro-texture results at both downforces, which echoed the results seen in the mini-marathon. When comparing the different polishing results obtained from breaking-in the pad with the different discs used in this study, the coefficient of friction (COF) and SiO2 removal rate (RR) were uncorrelated in all cases. However, the use of different discs resulted in different COF and RR trends. The uncorrelated COF and RR, as well as the differing trends, were explained by pad micro-texture results (i.e. the differing amount of fractured, poorly supported pad asperity summits).
机译:在先前的工作中,我们研究了调节剂类型和下压力对磨合过程中焊盘表面微纹理演变的影响,我们选择了某些磨合条件,以进行后续的SiO2覆盖硅晶片抛光研究。两种不同的调节剂盘与最多两种不同的调节下压力结合使用。对于每个圆盘下压力组合,使用SiO2晶片进行迷你马拉松比赛。在抛光之前,使用护发素-下压力组合中的一种将每个垫磨碎30分钟。这项研究的目的是在磨合后对晶片进行抛光,以观察磨合后立即进行抛光的过程。在这项研究中使用的一种圆盘在两个下压力下产生了相似的微观纹理结果,这与微型马拉松赛中看到的结果相呼应。将本研究中使用的不同磨盘打磨得到的不同抛光结果进行比较时,在所有情况下摩擦系数(COF)和SiO2去除率(RR)都不相关。但是,使用不同的光盘会导致不同的COF和RR趋势。不相关的COF和RR以及不同的趋势通过垫的微观纹理结果来解释(即,破裂的,支撑不良的垫粗糙峰的数量不同)。

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