首页> 外文OA文献 >Evaluation and Modeling of Novel Groove Pad Designs on Inter-layer Dielectric and Copper Chemical Mechanical Planarization
【2h】

Evaluation and Modeling of Novel Groove Pad Designs on Inter-layer Dielectric and Copper Chemical Mechanical Planarization

机译:层间介电和铜化学机械平面化中新型沟槽垫设计的评估和建模

摘要

The present dissertation includes several studies that describe the effects of novel groovedesigns on the tribological, thermal and kinetic characteristics of ILD and copper CMP. A novelIPL-FMC 200-mm polisher, in which friction force could be obtained in two directions, was introduced and compared to lab-scale (IPL 100-mm) polisher during ILD CMP. Results showed that scaling the ILD process from 100 to 200 mm caused a transition from a mechanically-limited regime, in which it was still possible to detect thermal effects, to a higher degree of mechanical limitation where it was no longer possible to detect thermal effects.Other studies in this dissertation were related to the evaluation and modeling of novel groove designs for copper CMP optimization. Novel groove designs were divided into two groups: (1) Logarithmic-Spiral and (2) Concentric Slanted. These novel groove designs were evaluated under several operating conditions, such as wafer load, sliding velocity and slurry flow rate. This work resulted in the identification of one novel groove design from each group, which resulted in high Copper RR. The observed RR behavior was attributed to two possible scenarios. Firstly, it was believed that these novel groove designs produced a more effective control of the transport of slurry into, and the discharge of spent slurry and debris out of, the pad-wafer interface. Secondly, the variations in slurry film thickness at the pad-wafer interface generated by the different groove designs evaluated, appeared to affect the degree of contact between the pad and the wafer; hence the mechanical (pad asperities-wafer contact) and chemical(rise in temperature) contributions of the system. A novel 3-Step copper removal model wasapplied to copper CMP. The model predicted remarkably well the removal rate behavior during copper polishing for different pad groove designs. The model allowed us to perform an analysis of the effect of groove designs on the chemical and mechanical contribution of the system.
机译:本文的研究包括描述新型沟槽设计对ILD和铜CMP的摩擦学,热学和动力学特性的影响的研究。介绍了一种新颖的IPL-FMC 200毫米抛光机,该抛光机可以在两个方向上获得摩擦力,并与ILD CMP期间的实验室规模(IPL 100毫米)抛光机进行了比较。结果表明,将ILD过程从100 mm缩放到200 mm会导致从机械受限的状态过渡到更高的机械限制程度,在机械受限的状态下仍然可以检测热效应,从而不再可能检测热效应本文的其他研究与铜CMP优化的新型凹槽设计的评估和建模有关。新颖的凹槽设计分为两组:(1)对数螺旋形和(2)同心倾斜。这些新颖的凹槽设计是在几种操作条件下进行评估的,例如晶片负载,滑动速度和浆料流速。这项工作导致从每个组中识别出一种新颖的凹槽设计,从而提高了铜的RR。观察到的RR行为归因于两种可能的情况。首先,人们相信,这些新颖的凹槽设计可以更有效地控制泥浆向垫-晶片界面的输送以及废浆和碎屑的排出。其次,通过评估的不同凹槽设计在垫-晶片界面处的浆料膜厚度的变化似乎影响垫和晶片之间的接触程度。因此,系统的机械(垫粗糙面-晶片接触)和化学(温度升高)影响。一种新颖的三步除铜模型被应用于铜CMP。该模型可以很好地预测不同抛光垫凹槽设计在铜抛光过程中的去除速率行为。该模型使我们能够分析凹槽设计对系统化学和机械影响的影响。

著录项

  • 作者

    Rosales-Yeomans Daniel;

  • 作者单位
  • 年度 2007
  • 总页数
  • 原文格式 PDF
  • 正文语种 EN
  • 中图分类

相似文献

  • 外文文献
  • 中文文献
  • 专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号