Tribo-Electrochemical Characterization of Ru, Ta and Cu CMP Systems Using Percarbonate Based Solutions

摘要

Defect-control is a critical requirement for chemical mechanical planarization (CMP) of the ultrathin diffusion barriers considered for the new Cu-interconnects. The challenging task of developing advanced CMP slurries for such systems can be aided by electrochemical evaluations of model CMP schemes under tribological conditions. The present work uses this strategy to characterize an alkaline slurry formulation aimed at minimizing galvanic corrosion in the CMP systems involving Ru, Ta (barrier metals) and Cu (wiring metal). This slurry is based on percarbonate and guanidine additives, and the test metals are polycrystalline disc samples. A particular goal of this study is to explore the essential analytical aspects of evaluating CMP systems in the tribo-electrochemical approach. The CMP specific surface reactions are characterized by potentiodynamic polarization and open circuit voltage measurements, performed both in the presence and in the absence of polishing, and by employing abrasive free as well as abrasive (colloidal SiO2) added solutions. The findings of these experiments are further checked by using impedance spectroscopy. The electrochemical mixed potential steps of the CMP promoting reactions are analyzed, and the removable surface species formed by these reactions are discussed. (C) The Author(s) 2015. Published by ECS. All rights reserved.