Growth of zinc peroxide (ZnO_2) and zinc oxide (ZnO) thin films by the successive ionic layer adsorption and reaction-SILAR-technique

摘要

Zinc peroxide, ZnO_2, thin films were grown by successive ionic layer adsorption and reaction (SILAR) technique at room temperature and normal pressure. The thin films were grown on glass, quartz, silicon, on poly(vinyl chloride) and polycarbonate substrates. The precursors used for ZnO_2 films were diluted aqueous solutions of ZnCl_2 complexed with ethylenediamine for cation and H_2O_2 for anion constituent of the film. The zinc peroxide film could be decomposed to zinc oxide by annealing in air or in vacuum. The as-grown films were polycrystalline, or amorphous and the annealed films were amorphous on all substrate materials. According to scanning electron microscopy images the films were uniform and homogeneous. The films were also characterized by UV spectroscopy.