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Preparation and the growth mechanism of zinc blende structure tin sulfide films by successive ionic layer adsorption and reaction

机译:连续离子层吸附与反应制备锌共混结构硫化锡薄膜及其生长机理

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摘要

Zinc blende structure tin sulfide (SnS) films have been prepared by successive ionic layer adsorption and reaction (SILAR) method. It is found that both the annealing and addition of NH_4C1 or NaCl to cation solution during the SILAR process can promote the crystallization of SnS films. The growth mechanism for this novel structure considered that the initial distribution of cations on the substrate surface during the cation adsorption process is the crucial factor that determines the structure of the final production. Because Cl~- anions can complex with Sn~(2+) cations, when the concentration of Cl~- in the cation precursor solution increases, more [SnCl]~+ complex ions are adsorbed on the substrate. These [SnCl]~ + ions assemble more orderly than Sn~(2+) ions because of the polarity of ions, so crystallized SnS films can be obtained when NH_4Cl or NaCl is added to the cation solution.
机译:采用连续离子层吸附反应法(SILAR)制备了锌共混结构硫化锡(SnS)薄膜。发现在SILAR过程中进行退火并在阳离子溶液中添加NH_4C1或NaCl均可促进SnS薄膜的结晶。这种新型结构的生长机理认为,在阳离子吸附过程中,阳离子在基材表面的初始分布是决定最终产品结构的关键因素。由于Cl--可以与Sn-(2+)阳离子络合,因此当阳离子前驱体溶液中Cl--的浓度增加时,更多的[SnCl]-+络合物离子将吸附在基质上。由于离子的极性,这些[SnCl]〜+离子比Sn〜(2+)离子更有序地聚集,因此,当将NH_4Cl或NaCl添加到阳离子溶液中时,可以获得结晶的SnS膜。

著录项

  • 来源
    《Journal of Crystal Growth》 |2010年第20期|p.3009-3013|共5页
  • 作者单位

    College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, Nanjing 210016, PR China;

    rnCollege of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, Nanjing 210016, PR China;

    rnCollege of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, Nanjing 210016, PR China;

    rnCollege of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, Nanjing 210016, PR China;

    rnCollege of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, Nanjing 210016, PR China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Growth models; A3. Successive ionic layer adsorption and reaction; B1. Sulfides; B2. Semiconducting materials;

    机译:A1。增长模型;A3。连续的离子层吸附和反应;B1。硫化物;B2。半导体材料;

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