首页> 外文期刊>Journal of Nanoelectronics and Optoelectronics >Preparation and Characterization of Transparent Conducting Mn and Ni-Doped Zinc Oxide Films Prepared by Successive Ionic Layer Adsorption and Reaction Method
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Preparation and Characterization of Transparent Conducting Mn and Ni-Doped Zinc Oxide Films Prepared by Successive Ionic Layer Adsorption and Reaction Method

机译:通过连续离子层吸附和反应方法制备透明导电Mn和Ni掺杂氧化锌膜的制备与表征

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This paper reported the preparation and characterization of transparent conducting oxide thin films. Undoped and doped ZnO thin films were prepared by SILAR method. The micro-structural and optical properties were investigated. X-ray diffraction patterns revealed that the prepared thin films are polycrystalline in nature and has a hexagonal structure. The micro-structural properties of prepared thin films were calculated and crystallite size tends to changes due to dopant. The texture coefficients have been evaluated and found to be greater than unity revealing high texturing of the film. Undoped and Mn-doped ZnO prefer the orientation of (002) but Ni-doped ZnO and Mn and Ni co-doped ZnO prefers (100) orientation. The transmittance spectra of pure and transition metal-doped films were plotted against UV-Vis-NIR region and found that the transmittance changes with dopant and nature of doping. The optical band gap values were found to be in the range of 3.00-3.39 eV. The optical constants such as extinction coefficient, refractive index, dielectric constant and optical conductivity were examined.
机译:本文报道了透明导电氧化物薄膜的制备和表征。通过Sill方法制备未掺杂和掺杂的ZnO薄膜。研究了微结构和光学性质。 X射线衍射图案显示,制备的薄膜是多晶本质上的并且具有六边形结构。计算制备的薄膜的微结构性质,并计算掺杂剂由于掺杂剂而变化的微晶尺寸。已经评估了纹理系数,并且发现大于膜的高纹理的统一性。未掺杂和Mn掺杂的ZnO更喜欢(002)但Ni掺杂的ZnO和Mn和Ni共掺杂ZnO的取向的取向(100)取向。绘制纯和过渡金属掺杂膜的透射光谱对UV-Vis-NiR区域绘制,发现透射率随掺杂剂和掺杂的性质而变化。发现光带间隙值在3.00-3.39eV的范围内。检查光学常数,例如消光系数,折射率,介电常数和光导率。

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