ASYMMETRIC TUNNELING SOURCE MOSFETS: A NOVEL DEVICE SOLUTION FOR SUB-100NM CMOS TECHNOLOGY

摘要

The paper presents a simulation study of the physics and performance of novel asymmetric tunneling solutions for the sub-100nm MOSFET technology. Two device structures have been investigated: Schottky Tunneling Source MOSFET and band-to-band P+-N+ Tunneling Source MOSFET. The Schottky MOSFET exhibits degraded Ion and subthreshold swing (in spite of improved DIBL). On the other hand, the novel PNPN MOSFET shows high Ion/Ioff and steep subthreshold behavior.