首页> 外文期刊>International Journal of Computational Engineering Science(IJCES) >DEEP STRUCTURES WET ETCHED INTO LITHIUYM NIOBATE USING A PHYSICAL MASK
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DEEP STRUCTURES WET ETCHED INTO LITHIUYM NIOBATE USING A PHYSICAL MASK

机译:使用物理面膜将深层结构浸入铌酸锂中

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The present work is an investigation and characterization of a new technique for etching and masking lithium niobate (LiNbO{sub}3) to realize high aspect ratio structures. LiNbO{sub}3 is a single crystal, optically clear (from 350 nanometer to 5 micrometer wavelength) piezoelectric and electro-optical material. It is inert to most reactants and has a high Curie temperature. These properties allow LiNbO{sub}3 to be used as a sensor or actuator in harsh environments or as an optical modulator. Multi-level lithium niobate deep etching techniques are currently unavailable or limited. The present work uses a chrome gold mask with a solution of hydrofluoric acid and nitric acid at 80℃ to etch the LiNbO{sub}3. The novel wet etch method developed yields an etch rate of 30 micrometer per hour on the -z face and less than 250 nm per hour on the +z face. In the experimentation done with this research trenches 80 micrometers deep were fabricated. Experimental etch and results are detailed.
机译:本工作是对用于腐蚀和掩蔽铌酸锂(LiNbO {sub} 3)以实现高纵横比结构的新技术的研究和表征。 LiNbO {sub} 3是一种单晶,光学透明(波长从350纳米到5微米)的压电和电光材料。它对大多数反应物呈惰性,居里温度高。这些特性使得LiNbO {sub} 3可以用作恶劣环境中的传感器或致动器或用作光调制器。目前尚无或限制使用多级铌酸锂深蚀刻技术。目前的工作是使用铬金掩模,在80℃的氢氟酸和硝酸溶液中蚀刻LiNbO {sub} 3。开发的新颖的湿法蚀刻方法在-z面上每小时产生30微米的蚀刻速率,而在+ z面上每小时产生小于250 nm的蚀刻速率。在这项研究的实验中,制造了80微米深的沟槽。实验蚀刻和结果详细。

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