Electronic integrated circuit fabricating method, involves forming etch mask in copolymer layer, forming another etch mask by etching dielectric material through former etch mask, and removing sacrificial material through latter etch mask

摘要

The method involves depositing a diblock copolymer layer on a dielectric layer, and forming an etch mask (9) in the copolymer layer by selective removal of polymethyl methacrylate. Another etch mask (10) is formed by etching dielectric material through the etch mask (9). The sacrificial material (6) is removed through the etch mask (10). The mask (9) comprises set of holes having an array pitch less than or equal to distance between cavities of a layer (4) of an integrated circuit. The layer (4) is made of silicon dioxide.