STUDIES OF A PT/PZT/PT SANDWICH STRUCTURE FOR FERAM APPLICATIONS USING SOL-GEL PROCESSING

摘要

A silicon-based PbTiO_3/Pb(Zr,Ti)O_3/PbTiO_3 (PT/PZT/PT) sandwich structure with Pt electrodes are prepared by a sol-gel method. Effects of the PT buffer layers to the phase formation of the PZT films are studies. Dielectric and ferroelectric properties of the sandwich structure are measured. Maximum dielectric constant of about 900 is obtained at the coercive field 20 kV/cm. The leakage current density is less than 5 X 10~(-9) A/cm~2 below 200 kV/cm, which is much lower than that of PZT/PT structure. And there is almost no fatigue even after 5 X 10~9 read/write cycles for the PT/PZT/PT sandwich structure.