Silicon-based PT/PZT/PT sandwich structure and method for manufacturing the same

摘要

A silicon based PT/PZT/PT sandwich structure is disclosed. A dielectric layer is formed over a semiconductor substrate. The dielectric layer preferably comprises a silicon dioxide layer. A first and the second conductive films are sequentially formed over the dielectric layer. A first ferroelectric film is formed over the first and second conductive films. A second ferroelectric film is formed over the first ferroelectric film. A third ferroelectric film is formed over the second ferroelectric film. The resulting structure is annealed. A third and fourth conductive films are sequentially formed over the third ferroelectric layer. The third and fourth conductive films are patterned.