PREPARATION AND ELECTRICAL PROPERTIES OF SOL-GEL DERIVED (1-x)Pb(Zn_(1/3)Nb_(2/3))O_(3-x)Pb(Zr_(0.4)Ti_(0.6))O_3 (x = 0.6) THIN FILMS

摘要

Films of (1-x)Pb(Zn_(1/3)Nb_(2/3))O_3-xPb(Zr_(0.4)Ti_(0.6))O_3 (x = 0.6, 40 PZN-60PZT) were deposited on Pt/TiO_2/SiO_2/Si substrate through spin coating. Using a combination of homogeneous precursor solutions and two-step pyrolysis process, it was possible to obtain the 40PZN-60PZT thin films of perovskite phase virtually without pyrochlore phase precipitation after annealing above 650 deg C. The root-mean-square surface roughness of a 220 nm thick film was 3 ran as measured by the atomic force microscopy. The 40PZN-60PZT films annealed at 720 deg C showed a well-saturated hysteresis loop at an applied voltage of 5 V with remanent polarization (P_r) and coercive voltage (V_c) of 29 mu C/cm~2 and 0.8 V, respectively. The leakage current density was lower than 10~(-6) A/cm2 at an applied voltage of 2.5 V.