Dielectric properties of ba(0.6)sr(0.4)tio(3) thin films with various strainstates

摘要

We could systematically control the strain states of a Ba(sub 0.6)Sr(sub0.4)TiO(sub 3) film by depositing a very thin Ba(sub 1(minus)x)Sr(sub x)TiO(sub 3) interlayer between the main layer of the Ba(sub 0.6)Sr(sub 0.4)TiO(sub 3) and a MgO(001) substrate. Ba(sub 0.6)Sr(sub 0.4)TiO(sub 3) films showed very strong dependence of dielectric properties on the strain states. The strain induced by the MgO substrate was relaxed faster than that induced by an interlayer.