首页> 外文会议>International Conference on Thin Film Physics and Applications >Effects of TiO_2 Buffer Layers on the Dielectric and Tunable Properties of Ba_(0.6)Sr_(0.4)TiO_3 Thin Films Prepared by Pulsed Laser Deposition
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Effects of TiO_2 Buffer Layers on the Dielectric and Tunable Properties of Ba_(0.6)Sr_(0.4)TiO_3 Thin Films Prepared by Pulsed Laser Deposition

机译:TiO_2缓冲层对脉冲激光沉积制备的Ba_(0.6)Sr_(0.4)Sr_(0.4)TiO_3薄膜的介电和可调性能的影响

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The dielectric properties of Ba_(0.6)Sr_(0.4)TiO_3 (BST) thin films were greatly affected by interfacial layers between the electrodes and BST thin films'. Our previous work shows that the dielectric loss of the BST system can be decreased by an excess of Ti contents. In this paper, TiO_2 buffer layers were grown between BST thin films and the Pt coated silicon substrate, which are expected to improve the interfacial conditions by providing a certain amount of titanium. Both BST and TiO_2 films were prepared by pulsed laser deposition. Different substrate temperatures of 550°C, 600°C, 650°C, 700°C and different oxygen pressures of 1mTorr, 10mTorr, and 100mTorr were used for the deposition of TiO_2 buffer layers. XRD pattern shows that all the samples have crystallized into the perovskite structure and the (110) peaks become sharper with increasing substrate temperature, indicating better crystallization along this direction. The increased tunability and lower loss of BST thin films with TiO_2 buffer layers prepared at the optimized temperature and oxygen pressure achieve about 45.9% and 0.01 at the field of 200kV/cm and 1 MHz. The figure of merit of BST thin films is significantly improved to 45.9 upon using TiO_2 buffer layers, which is only about 18.2 for BST thin films prepared directly on the substrates. Our results indicate that TiO_2 buffered BST thin films are expected to have better dielectric and tunable properties.
机译:Ba_(0.6)Sr_(0.4)TiO_3(BST)薄膜的介电性能受电极和BST薄膜之间的界面层的大大影响。我们以前的工作表明,BST系统的介电损耗可以通过过量的Ti含量降低。在本文中,在BST薄膜和PT涂覆的硅衬底之间生长TiO_2缓冲层,预期通过提供一定量的钛来改善界面条件。 BST和TiO_2薄膜通过脉冲激光沉积制备。使用550℃,600℃,650℃,700℃和1mTorr,10mTorr和100mtorr的不同氧气压力的不同的基板温度用于沉积TiO_2缓冲层。 XRD图案表明,所有样品都结晶到钙钛矿结构中,并且(110)峰值随着基板温度的增加而变得更加清晰,表明沿着该方向更好地结晶。通过在优化温度和氧气压力下制备的TiO_2缓冲层的增强可调节性和BST薄膜的损失较低,在200kV / cm和1MHz的场上达到约45.9%和0.01。使用TiO_2缓冲层,BST薄膜的优异图谱值显着改善至45.9,其仅为直接在基材上制备的BST薄膜约18.2。我们的结果表明,预期TiO_2缓冲BST薄膜具有更好的介电和可调性。

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