Electrical properties and x-ray photoelectron spectroscopy studies of Bi(Zn_(0.5)Ti_(0.5))O_3 doped Pb(Zr_(0.4)Ti_(0.6))O_3 thin films

摘要

(1-x)Pb(Zr_(0.4),Ti_(0.6))O_3-(x)Bi(Zn_(0.5),Ti_(0.5))O_3 (PZT-BZT) (x=0, 0.03, 0.05, 0.08, and 0.1) films were deposited on Pt(111)/Ti/SiO_2/Si(100) substrates by chemical solution deposition using spin-coating. All samples showed highly (111) oriented perovskite phase and no other phase was observed. The ferroelectric properties of PZT-BZT films were systematically investigated as a function of the content x of the BZT solution. It is found that BZT doping in PZT films could greatly enhance the remnant polarization (P_r), as well as improve the fatigue property. In a 3 wt % BZT-doped PZT film, the 2P_r and the coercive field (E_c) are 90 μC/cm~2 and 95 kV/cm at 10 kHz, respectively, at an electric field of 500 kV/cm, and the leakage current density is less than 1 × 10~(-7) A/cm~2. The impact of BZT doping on the structure of PZT has been investigated by x-ray photoelectron spectroscopy.