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机译:在各种温度和各种温度和各种事件光子能量和强度下,Si Delta-掺杂的Algaas / Ingaas / Algaas量子的负性和正光电导性的时间依赖性
Chung Yuan Christian Univ Dept Phys Taoyuan 32023 Taiwan;
Chung Yuan Christian Univ Dept Phys Taoyuan 32023 Taiwan;
Chung Yuan Christian Univ Conary Enterprise CO Ltd Ind Accelerator &
Incubat Ctr Taoyuan 32023 Taiwan;
Chung Yuan Christian Univ Dept Phys Taoyuan 32023 Taiwan;
Chung Yuan Christian Univ Dept Phys Taoyuan 32023 Taiwan;
Chung Yuan Christian Univ Dept Phys Taoyuan 32023 Taiwan;
Chung Yuan Christian Univ Dept Phys Taoyuan 32023 Taiwan;
Chung Yuan Christian Univ Dept Phys Taoyuan 32023 Taiwan;
Chung Yuan Christian Univ Dept Phys Taoyuan 32023 Taiwan;
AlGaAs; InGaAs; AlGaAs quantum well; InGaAs active channel; interface states of InGaAs; Si delta-doped structure; negative photoconductivity; photoconductivity;
机译:通过霍尔效应分析测量的各种空间层厚度,Si-δ掺杂层和Algaas / InGaAs / Algaas / Algaas量子的温度依赖性电荷载流量
机译:基于AlGaAs / InGaAs / AlGaAs和两侧掺杂的PHEMT异质结构的电学和结构性能
机译:通过弛豫渐变的Ge_xSi_(1-x)缓冲层在Si基板上制造的改进的室温连续波GaAs / AlGaAs和InGaAs / GaAs / AlGaAs激光器
机译:InGaAs / AlGaAs和GaAs / AlGaAs复合多量子阱中的非均匀隧道传输
机译:掺Si的GaAs / AlGaAs多量子阱中电子与电子相互作用的远红外研究。
机译:非掺杂InGaAs / AlGaAs多量子阱中异常线性光电流效应及其对波长的依赖性
机译:单片集成多个InGaAs / AlGaAs和GaAs / AlGaAs量子阱系统中光激发载流子的隧穿竞争
机译:单片二维表面发射应变层InGaas / alGaas和alInGaas / alGaas二极管激光器阵列,具有超过50%的差分量子效率