机译:非掺杂InGaAs / AlGaAs多量子阱中不同取向的面内电场下的自旋输运
Henan Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng 475004;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences,Beijing 100049;
Henan Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng 475004;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences,Beijing 100049;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;
Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute, Nanjing 210016;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences,Beijing 100049;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences,Beijing 100049;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences,Beijing 100049;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;