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Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells

机译:非掺杂InGaAs / AlGaAs多量子阱中不同取向的面内电场下的自旋输运

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摘要

The spin-polarized photocurrent is used to study the in-plane electric field dependent spin transport in undoped InGaAs/AlGaAs multiple quantum wells.In the temperature range of 77-297K,the spin-polarized photocurrent shows an anisotropic spin transport under different oriented in-plane electric fields.We ascribe this characteristic to two dominant mechanisms:the hot phonon effect and the Rashba spin-orbit effect which is influenced by the in-plane electric fields with different orientations.The formulas are proposed to fit our experiments,suggesting a guide of potential applications and devices.
机译:自旋极化光电流用于研究非掺杂InGaAs / AlGaAs多量子阱中面内电场的自旋输运。在77-297K的温度范围内,自旋极化光电流在不同取向下呈现各向异性的自旋输运。我们将此特性归因于两个主要机制:热声子效应和Rashba自旋轨道效应,它们受不同方向的平面内电场的影响。提出了适合于我们实验的公式,建议采用以下公式:潜在应用和设备指南。

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  • 来源
    《中国物理快报:英文版》 |2019年第7期|82-85|共4页
  • 作者单位

    Henan Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng 475004;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;

    Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences,Beijing 100049;

    Henan Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng 475004;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;

    Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences,Beijing 100049;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;

    Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;

    Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute, Nanjing 210016;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;

    Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences,Beijing 100049;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;

    Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences,Beijing 100049;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;

    Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences,Beijing 100049;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083;

  • 收录信息 中国科学引文数据库(CSCD);
  • 原文格式 PDF
  • 正文语种 eng
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