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Effects of Interlayer Coupling and Band Offset on Second Harmonic Generation in Vertical MoS2/MoS2(1-x)Se2x Structures

机译:中间层耦合和带偏移对垂直MOS2 / MOS2(1-X)SE2X结构中的第二谐波产生的影响

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Noncentrosymmetric monolayers (MLs) of transition metal dichalcogenides (TMDCs) and their 3R-type vertical stacks provide an ideal platform for studying atomic-scale nonlinear light-matter interaction in terms of second harmonic generation (SHG). Unlike the case of MLs, SHG from artificial stacks can be nontrivially affected by interlayer coupling and band offset between the constituent MLs, where the latter occurs for band-gap-engineered vertical heterostructures (VHs). In order to study these effects, we produced different sets of 3R-type homobilayers (homo-BLs) and heterobilayers (hetero-BLs) composed of MoS2 and its ternary alloy MoS2(1-x)Se2x. We first investigated the impact of interlayer coupling on the SHG response across the A- and B-exciton resonances in the MoS2 homo-BLs. The coupling strength was varied by preparing (i) decoupled BLs (SiO2 intercalated), (ii) weakly coupled BLs (dry transferred), and (iii) strongly coupled BLs (postannealed) and monitored by photoluminescence, Raman, and reflectance difference spectroscopy, and atomic force microscopy. Unlike the decoupled BL, SHG in the coupled BLs cannot be explained by the simple square law in thickness due to coupling-induced band modification. The impact of exciton-resonance offset on SHG was also investigated in the hetero-BLs by controlling the Se concentration in MoS2xSe2(x-1). Although these VHs can significantly broaden the spectral range for efficient SHG by vertically superposing distinct resonances of the constituent MLs, coherent reinforcement of SHG cannot be achieved basically because of the pi/2 phase difference between the on-resonance SHG field in one ML and the off-resonance SHG field in the other ML. Upon postannealing, however, the overlapping resonance regime exhibited unexpectedly high SHG enhancement. This may arise from the formation of the strong resonance when the VHs approach ideal 3R-type hetero-BLs. Our approach may be utilized for fully exploiting the TMDC VHs for highly efficient broadband SHG applications.
机译:过渡金属二甲基甲基物(TMDC)的非胞间二元单层(MLS)及其3R型垂直叠层提供了在二次谐波产生(SHG)方面研究原子尺度非线性光物质相互作用的理想平台。与MLS的情况不同,由人造叠层的SHG可以由层间耦合和组成MLS之间的带偏移来非移动,其中后者发生用于带间隙工程的垂直性状过度结构(VHS)。为了研究这些效果,我们生产由MOS2和其三元合金MOS2(1-X)SE2X组成的不同的3R型同源物(HOMO-BLS)和异质层(异质-BLS)。我们首先研究了在MOS2 HOMO-BLS中的A-和B激子共振上的SHG响应对SHG响应的影响。通过制备(I)去耦BLS(SiO 2嵌入),(ii)弱偶联的BLS(干转移)和(iii)强烈偶联的BLS(底部化)并通过光致发光,拉曼和反射差异差异光谱监测来改变耦合强度。和原子力显微镜。与去耦BL不同,由于耦合诱导的带修改,通过厚度的简单方法律不能解释耦合BL中的SHG。通过控制MOS2XSE2(X-1)中的SE浓度,还在异质-Bls中研究了激子共振偏移对SHG的影响。尽管这些VHS通过垂直叠加组成MLS的不同谐振可以显着扩大高效SHG的光谱范围,但由于一个ML和ON-ARENANCE SHG字段之间的PI / 2相位差,SHG的相干增强不能实现SHG。其他mL中的偏振SHG字段。然而,在审理后,重叠的共振制度呈现出意外的高SHG增强。当VHS接近理想的3R型异质-BLs时,这可能从形成强的共振的形成。我们的方法可用于充分利用TMDC VHS进行高效的宽带SHG应用。

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