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首页> 外文期刊>Chemical engineering journal >Conductive polymer nanolayer modified one-dimensional ZnO/CdSe photoanode with enhanced photoelectrochemical properties by in-situ ions exchange method
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Conductive polymer nanolayer modified one-dimensional ZnO/CdSe photoanode with enhanced photoelectrochemical properties by in-situ ions exchange method

机译:通过原位离子交换法改变了一维ZnO / CDSE光电二维光电化学性能

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摘要

In this paper, a ZnSe layer was formed by in-situ conversion on the surface of ZnO nanorod array, and then CdSe layer was transformed from the ZnSe layer by ion exchange method. Subsequently, a p-type poly 3,4-ethylenedioxythiophene (PEDOT) ultrathin conductive layer was deposited on the surface of CdSe by multi-current step deposition method. The separation and transmission processes of the photogenerated carriers were studied by analyzing the results of electrochemical impedance spectroscopy (EIS) and intensity modulated photocurrent/photovoltage spectroscopy (CIMPS/CIMVS). The in-situ growth method could reduce the interface barrier between ZnO and CdSe and optimize the interface exchange process of the photogenerated charge carriers. Meanwhile, the p-n junction constructed between PEDOT and CdSe layer could improve the separation efficiency of the photogenerated charge carriers. Therefore, PEDOT layer significantly promote the photoelectrochemical performance by passivating the surface state of CdSe and suppressing the secondary recombination of the photogenerated charge carriers.
机译:在本文中,通过原位转化在ZnO纳米峰阵列表面上的原位转化形成ZnSe层,然后通过离子交换方法从ZnSe层转化Cdse层。随后,通过多电流步骤沉积方法沉积在CDSE的表面上沉积P型聚3,4-亚乙二氧噻吩(PEDOT)超薄导电层。通过分析电化学阻抗谱(EIS)和强度调制的光电流/光伏光谱(CIMPS / CIMV)的结果来研究光致载体的分离和传输过程。原位增长方法可以减少ZnO和CDSE之间的界面屏障,并优化光发化电荷载流子的界面交换过程。同时,在佩特和CdSe层之间构建的P-n结可以提高光催化电荷载体的分离效率。因此,PEDOT层通过钝化CDSE的表面状态而显着促进光电化学性能,并抑制光催化的电荷载体的二次重组。

著录项

  • 来源
    《Chemical engineering journal》 |2019年第2019期|共9页
  • 作者单位

    Qingdao Univ Sci &

    Technol Sch Environm &

    Safety Engn 53 Zhengzhou Rd Qingdao 266042 Shandong Peoples R China;

    Qingdao Univ Sci &

    Technol Sch Environm &

    Safety Engn 53 Zhengzhou Rd Qingdao 266042 Shandong Peoples R China;

    Qingdao Univ Sci &

    Technol Sch Environm &

    Safety Engn 53 Zhengzhou Rd Qingdao 266042 Shandong Peoples R China;

    Xidian Univ Sch Microelect Key Lab Wide Band Gap Semicond Mat &

    Devices Xian 710071 Shaanxi Peoples R China;

    Qingdao Univ Sci &

    Technol Sch Environm &

    Safety Engn 53 Zhengzhou Rd Qingdao 266042 Shandong Peoples R China;

    Qingdao Univ Sci &

    Technol Sch Environm &

    Safety Engn 53 Zhengzhou Rd Qingdao 266042 Shandong Peoples R China;

    Qingdao Univ Sci &

    Technol Sch Environm &

    Safety Engn 53 Zhengzhou Rd Qingdao 266042 Shandong Peoples R China;

    Qingdao Univ Sci &

    Technol Sch Environm &

    Safety Engn 53 Zhengzhou Rd Qingdao 266042 Shandong Peoples R China;

    Xidian Univ Sch Microelect Key Lab Wide Band Gap Semicond Mat &

    Devices Xian 710071 Shaanxi Peoples R China;

    Xidian Univ Sch Microelect Key Lab Wide Band Gap Semicond Mat &

    Devices Xian 710071 Shaanxi Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学工业;
  • 关键词

    Organic conductive polymer; In-situ exchange method; ZnO/CdSe; Photoelectrochemical; EIS; CIMPS/CIMVS;

    机译:有机导电聚合物;原位交换方法;ZnO / CDSE;光电化学;EIS;CIMPS / CIMVS;

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