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The effect of signal activity on propagation delay of CMOS logic gates driving coupled on-chip interconnections

机译:信号活动对驱动耦合的片上互连的CMOS逻辑门的传播延迟的影响

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The effect of interconnect coupling capacitances on neighboring CMOS logic gates driving coupled interconnections strongly depends upon signal activity. A transient analysis of two capacitively coupled CMOS logic gates is presented in this paper for different combinations of signal activity. The uncertainty of the effective load capacitance and propagation delay due to signal activity is addressed. Analytical expressions characterizing the output voltage and propagation delay are also presented for different signal activity conditions. The propagation delay based on these analytical expressions is within 3% as compared to SPICE, while the estimated delay neglecting the difference between the load capacitances can exceed 45%. The logic gates should be properly sized to balance the load capacitances in order to minimize any uncertainty in the delay and load. The peak noise voltage on a quiet interconnection determined from the analytical expressions is within 4% of SPICE. The peak noise voltage on a quiet interconnection can be minimized if the effective output conductance of the quiet logic gate driving the interconnect is increased.
机译:互连耦合电容对驱动耦合互连的相邻CMOS逻辑门的影响在很大程度上取决于信号活动。本文针对信号活动的不同组合提出了两个电容耦合CMOS逻辑门的瞬态分析。解决了由于信号活动导致的有效负载电容和传播延迟的不确定性。还针对不同的信号活动条件提供了表征输出电压和传播延迟的解析表达式。与SPICE相比,基于这些解析表达式的传播延迟在3%以内,而忽略负载电容之间差异的估计延迟可能超过45%。逻辑门的大小应适当选择,以平衡负载电容,以最大程度地减少延迟和负载的不确定性。由解析表达式确定的安静互连上的峰值噪声电压在SPICE的4%以内。如果增加驱动互连的安静逻辑门的有效输出电导,则可使安静互连上的峰值噪声电压最小化。

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