Characterization of ultrathin insulator/Si interfaces formed on n-Si(001) by UHV contactless capacitance-voltage method

摘要

Ultrathin insulator/Si interfaces formed by various low temperature processes were characterized by UHV contactless C-V and XPS methods. For the SiO{sub}2/Si interfaces prepared by a thermal oxidation process using dry O{sub}2, the interface state density was increased with decreasing the oxidation temperature. In addition, lower temperature process was found to produce a discrete defect level near midgap. The ECR-excited N{sub}2O plasma process at 400 °C realized the interface with relatively low interface state density and wide distribution. Furthermore improvement of interface properties were achieved by the UHV annealing process at 900 °C.