EFFECT OF SURFACE PASSIVATION BY SIN/SIO_2 OF ALGAN/GAN HIGH-ELECTRON MOBILITY TRANSISTORS ON SI SUBSTRATE BY DEEP LEVEL TRANSIENT SPECTROSCOPY METHOD

摘要

Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO_2 passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS) measurements were performed on the device after the passivation by a (50/100 nm) SiN/SiO_2 film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device.