Electrical and optical characteristics of GaN-based light-emitting diodes fabricated with emission wavelengths of 429-467 nm

摘要

The electrical and optical characteristics of GaN-based light-emitting diodes (LEDs) fabricated with emission wavelengths of 429-467 nm were investigated. The optical output increased with increasing emission wavelength, which is attributed to the enhanced quantum confinement effect as a result of indium composition fluctuation. With higher indium content, the LEDs exhibited unfavorable performance, including a larger efficiency droop, spectral blueshift, and spectral broadening, due to indium-induced strains. The effect of heterointerfaces associated with the indium content of the active region on the device resistance was negligible.