Electrical properties of ferroelectric PbTiO{sub}3 thin films formed by metalorganic decomposition

摘要

The FET-type nonvolatile memories with ferroelectric material as the gate dielectric is now attracting the attention. In this study, we have fabricated the FET-type memories, namely MFIS-type devices using PbTiO{sub}3 by metalorganic decomposition (MOD). And SiO{sub}2,SrTiO{sub}3 and Y{sub}2O{sub}3 films are used as the buffer layer between PbTiO{sub}3 and Si substrate. Almost no ferroelectric properties for the PbTiO3 films are observed, but higher dielectric constant (ε> 240) of PbTiO{sub}3 was obtained using SrTiO{sub}3 and Y{sub}2O{sub}3 buffer layers.