COATING SOLUTIONS FOR USE IN FORMING BISMUTH-BASED FERROELECTRIC THIN FILMS AND FERROELECTRIC THIN FILMS FERROELECTRIC CAPACITORS AND FERROELECTRIC MEMORIES FORMED WITH SAID COATING SOLUTIONS AS WELL AS PROCESSES FOR PRODUCTION THEREOF

摘要

Bi, A metal element (where A is at least one metal element selected from Bi, Pb, Ba, Sr, Ca, Na, K and rare earth elements) and B metal element (where B is Ti, Nb, Each of the metal alkoxides of Ta, W, Mo, Fe, Co, and Cr), and any two or more of these metal alkoxides form a composite metal alkoxide, Disclosed are a coating liquid for forming a Bi-based ferroelectric thin film containing a composite metal alkoxide, a ferroelectric thin film, a ferroelectric capacitor, a ferroelectric memory, and a manufacturing method thereof.