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机译:具有高掺杂碳缓冲液的短通道AlGaN / GaN-On-Si-Si-Si Hemt的直流和RF特性的电解降低
Seoul Natl Univ Interuniv Semicond Res Ctr Dept Elect &
Comp Engn Seoul 08826 South Korea;
Seoul Natl Univ Interuniv Semicond Res Ctr Dept Elect &
Comp Engn Seoul 08826 South Korea;
Seoul Natl Univ Interuniv Semicond Res Ctr Dept Elect &
Comp Engn Seoul 08826 South Korea;
Seoul Natl Univ Interuniv Semicond Res Ctr Dept Elect &
Comp Engn Seoul 08826 South Korea;
Seoul Natl Univ Interuniv Semicond Res Ctr Dept Elect &
Comp Engn Seoul 08826 South Korea;
Hongik Univ Sch Elect &
Elect Engn Seoul 04066 South Korea;
AlGaN/GaN; Carbon-doped buffer; Sub-threshold slope; Microwave performance; Photoluminescence; Donor;
机译:具有高掺杂碳缓冲液的短通道AlGaN / GaN-On-Si-Si-Si Hemt的直流和RF特性的电解降低
机译:掺Fe或无意掺杂GaN缓冲层的MOCVD在SiC上生长的AlGaN / GaN HEMT的直流和微波性能的比较
机译:通过针对毫米波应用的GaN缓冲器的P型掺杂,改善了AlGaN / GaN Hemt中的RF和DC性能
机译:掺杂铁Fe和碳的GaN缓冲层对常开空气/ ALN / ALN / GAN晶体管直流静态特性掺杂GaN缓冲层的效果
机译:机械应力对AlGaN / GaN HEMT性能的影响:沟道电阻和栅极电流。
机译:AlGaN / GaN HEMT的优化Ti / Al / Ta / Au欧姆接触的电学表征和纳米级表面形貌
机译:AlGaN / GaN-on-Si HEMT中碳掺杂缓冲液中的横向电荷传输