Impact of Gatelength on the Performance of InGaAs/InAs/InGaAs Composite Channel Dual Material Double Gate-High Electron Mobility Transistor Devices for High-Frequency Applications

摘要

In this work, the Impact of gate length (L-g) on the performance of InGaAs/InAs/InGaAs Composite Channel DMDG-HEMT Devices for high-Frequency applications is investigated. The effects of gate length (L-g) on the device characteristics are explored by optimizing the barrier thickness (T-B). It is evident that by introducing dual material gate (DMG), at both top and bottom of the device, shows an increase in drain current, transconductance and higher I-ON/I-OFF ratio with less short channel effect (SCE). For drain to source voltage (V-ds) = 1 V, InGaAs/InAs/InGaAs composite channel DMDG-HEMT devices exhibit the record drain current (I-ds) of 4.42 x 10(-3) A/mu m, transconductance (g(m)) of 4.48 S/mm and an current ratio I-ON/I-OFF = 6.8 x 10(5) with a reduced subthreshold slope (SS) of 62.1 mV/dec and a threshold voltage (V-T) = -0.12 V for 40 nm gate length. Moreover, the RF and analog performance metrics are explored and record high cutoff frequency f(T) = 835 GHz and maximum oscillation frequency f(max) = 986 GHz making it suitable for future terahertz applications.