High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors rown by Metal-Organic Vapor-Phase Epitaxy

Hiroki Sugiyama; Toshihiko Kosugi; Haruki Yokoyama; Koichi Murata; Yasuro Yamane; Masami Tokumitsu; Takatomo Enoki

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High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors rown by Metal-Organic Vapor-Phase Epitaxy

机译：金属有机汽相外延法制得的高性能InGaAs / InP复合沟道高电子迁移率晶体管

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This paper reports InGaAs/InP composite-channel (CC) high electron mobility transistors (HEMTs) grown by metal-organic vapor-phase epitaxy (MOVPE) with excellent breakdown and high-speed characteristics. Atomic force microscopy (AFM) reveals high-quality

机译：本文报道了通过金属有机气相外延（MOVPE）生长的InGaAs / InP复合沟道（CC）高电子迁移率晶体管（HEMT），该晶体管具有出色的击穿和高速特性。原子力显微镜（AFM）显示高质量

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来源
《Japanese journal of applied physics》 |2008年第4issue2期|2828-2832|共5页
作者
Hiroki Sugiyama; Toshihiko Kosugi; Haruki Yokoyama; Koichi Murata; Yasuro Yamane; Masami Tokumitsu; Takatomo Enoki;
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正文语种 eng
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关键词
InP; InGaAs; HEMT; composite channel; MOVPE; breakdown voltage;

机译：InP;铟镓砷HEMT;复合渠道MOVPE;击穿电压;

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专利

1. Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers [J] . Hiroki Sugiyama, Haruki Yokoyama, Hideaki Matsuzaki, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2005,第6A期

机译：拟态InAlP / InGaAs高电子迁移率晶体管晶片的金属有机气相外延。
2. Surface migration effect and lateral vapor-phase diffusion effect for InGaAsP/InP narrow-stripe selective metal-organic vapor-phase epitaxy [J] . Yasutaka Sakata, Yasumasa Inomoto, Keiro Komatsu Journal of Crystal Growth . 2000,第1a4期

机译：InGaAsP / InP窄带选择性金属有机气相外延的表面迁移效应和横向气相扩散效应
3. Comparative Study on Breakdown Characteristics for InGaAs Metamorphic High Electron Mobility Transistor and InGaAs/InP-Composite Channel Metamorphic High Electron Mobility Transistor [J] . Seok Gyu CHOI, Jung Hun OH, Bok Hyung LEE, IEICE Transactions on Electronics . 2006,第5期

机译：InGaAs变质高电子迁移率晶体管与InGaAs / InP复合沟道变质高电子迁移率晶体管的击穿特性比较研究
4. High-electron-mobility In0.53Ga0.47As/In0.8Ga0.2As composite-channel modulation-doped structures grown by metal-organic vapor-phase epitaxy [C] . Sugiyama Hiroki, Matsuzaki Hideaki, Yokoyama Haruki, 2010 International Conference on Indium Phosphide and Related Materials . 2010

机译：高电子迁移率In 0.53 Ga 0.47 As / In 0.8 Ga 0.2 作为复合通道调制掺杂金属有机气相外延生长的结构
5. Solid source molecular beam epitaxy of indium phosphide-based composite-channel high electron mobility transistor structures for microwave and millimeter-wave power applications. [D] . Kim, Tong-Ho. 2000

机译：基于磷化铟的复合通道高电子迁移率晶体管结构的固体源分子束外延，用于微波和毫米波功率应用。
6. Effect of Electron Irradiation Fluence on InP-Based High Electron Mobility Transistors [O] . Shuxiang Sun, Peng Ding, Zhi Jin, 2019

机译：电子辐照通量对基于InP的高电子迁移率晶体管的影响
7. Wavelength-tunable (1.55‐μm region) InAs quantum dots in InGaAsP∕InP (100) grown by metal-organic vapor-phase epitaxy [O] . S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven, 2005

机译：由金属 - 有机气相外延生长的InGaASP / InP（100）中的波长可调（1.55-μm区域）InAs量子点
8. InP/InGaAs Heterojunction Bipolar Transistors Grown on Ge/P Co-implanted InP Substrates by Metal-Organic Molecular Bean Epitaxy. [R] . Sung, W. J., Kopf, R. F., Werder, D. J., 2002

机译：通过金属有机分子豆外延生长在Ge / p共注入Inp衬底上的Inp / InGaas异质结双极晶体管。

High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors rown by Metal-Organic Vapor-Phase Epitaxy

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