AIPSb/InP Single-Straight Transition Bipolar Transistor to InP substrate for high-speed and high-performance applications

摘要

An epitaxial struture (10) and method of manufacture for a single heterojunction bipolar transistor capable of being utilized in high-speed and high-power applications. Preferably, the epitaxial structure comprises an N-type collector (18) made from InP, a P-type base (16) made from InP, and an N-type emitter (12) made from a semiconductor material of approximately 39 mole percent AlP and approximately AlSb mole percent Sb. IMAGE