Proton-induced radiation effects in the I/O blocks of an SRAM-based FPGA

摘要

This work presents an experimental study of the proton-induced failures in the Input/ Output blocks and in the associated configuration of an SRAM-based Field Programmable Gate Array (FPGA) using a single inverter ring oscillator-configuration. The tests have been done on the KINTEX-7 FPGAs, which were exposed to a 35 MeV proton beam. The cross-sections for 3 classes of single-event effects-in an I/O user logic with a low configuration memory usage of less than 1%-have been determined to be: 2.22_(-1)~(+1.4) ·10~(-11) cm~2/device, 1.53·10~(-11) cm~2/device (the upper limit) and 0.97_(-0.6)~(+1)·10~(-11) cm~2/device, respectively. The conclusions and the probable impact of the results on the end-application are presented.